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Cascode 型GaN 功率器件的开关过程及损耗分析		论文网站
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics		论文网站
Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx		论文网站
Temperature-Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-Based MIS-HEMT Power Devices Under Hard Switching Operations		论文网站
Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors		论文网站
Effects of substrate termination on Ron increase under stress in 650 V GaN power devices		论文网站
Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment		论文网站